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High Temperature (250C) SiC Junction Transistors offered in hermetic packages


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GeneSiC's hermetic packaged high temperature SJTs use high temperature solders and encapsulants.
GeneSiC's hermetic packaged high temperature SJTs use high temperature solders and encapsulants.
2013-12-10 18:09:55 - The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies

Dulles, Virginia., Dec 10, 2013 -- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability through its distributors and directly a family high temperature packaged 600 V SiC Junction Transistors (SJT) in the 3-50 Amperes current ratings in JEDEC industry-standard through hole and surface mount packages. Incorporating these high temperature, low on-resistance, high frequency SiC Transistors in hermetic packages, high temperature solders and encapsulation will increase conversion efficiency and reduce the size/weight/volume of high temperature power conversion applications.
Contemporary high temperature power supply, motor control and actuator circuits used in oil/gas/downhole and aerospace applications suffer from lack of availability of a viable high temperature Silicon Carbide solution.

Silicon transistors suffer from low circuit efficiencies and large sizes because they suffer from high leakage currents and low poor switching characteristics. Both these parameters become worse at higher junction temperatures. With thermally constraint environments, junction temperatures rise quite easily even when modest currents are passed. Hermetically packaged SiC transistors offer unique characteristics that promise to revolutionize the capability of downhole and aerospace applications. GeneSiC’s 650 V/3-50 A SiC Junction Transistors feature near zero switching times that does not change with temperature. The 250oC junction temperature-rated devices offer relatively large temperature margins for applications that are operating under extreme environments.
Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, SiC Junction Transistors can be easily paralleled because of their matching transient characteristics.
"As downhole and aerospace application designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, they need SiC switches which can offer a standard of performance, reliability and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s SJT products help designers achieve all that in a more robust solution. These products complement the hermetic packaged SiC rectifier released last year by GeneSiC, and the bare die products released earlier this year, while paving the way for us to offer high temperature, low-inductance, power modules in the near future " said Dr. Ranbir Singh, President of GeneSiC Semiconductor.
Isolated TO-257 with 600 V SJTs:
• 65 mOhms/20 Amp (2N7639-GA); 170 mOhms/8 Amp (2N7637-GA); and 425 mOhms/4 Amp (2N7635-GA)
• Tjmax = 250oC
• Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
• Corresponding Bare Die GA20JT06-CAL (in 2N7639-GA); GA10JT06-CAL (in 2N7637-GA); and GA05JT06-CAL (in 2N7635-GA)
Non-Isolated TO-258 Prototype package with 600 SJTs
• 25 mOhms/50 Amp (GA50JT06-258 prototype package)
• Tjmax = 250oC
• Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
• Corresponding Bare Die GA50JT06-CAL (in GA50JT06-258)
Surface Mount TO-276 (SMD0.5) with 600 SJTs
• 65 mOhms/20 Amp (2N7640-GA); 170 mOhms/8 Amp (2N7638-GA); and 425 mOhms/4 Amp (2N7636-GA)
• Tjmax = 250oC
• Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
All devices are 100% tested to full voltage/current ratings and housed in hermetic packages. Technical Support and SPICE circuit models are offered. The devices are immediately available from GeneSiC Directly and/or through its Authorized Distributors.
About GeneSiC Semiconductor Inc.
GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.
For more information, please visit www.genesicsemi.com/index.php/hit-sic/sjt





Press Information:
GeneSiC Semiconductor Inc.

43670 Trade Center Place
Suite 155
Dulles VA 20166

Contact Person:
Robert Siddle
PR Manager
Phone: +17039968200
email: email

Web: www.genesicsemi.com/index.php/hit-sic/sjt

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